BOUND BIEXCITONS IN II-VI SEMICONDUCTORS

被引：6
|
作者：
RAZBIRIN, BS
NELSON, DK
ERLAND, J
PANTKE, KH
LYSSENKO, VG
HVAN, JM
机构：
[1] ODENSE UNIV,INST FYS,DK-5230 ODENSE,DENMARK
[2] TECH UNIV DENMARK,MIKROELEKTR CENTRET,DK-2800 LYNGBY,DENMARK
[3] CHERNOGOLOVKA MICROELECTR TECHNOL & SUPERPURE MAT,CHERNOGOLOVKA 142432,RUSSIA
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 01期
关键词：
SEMICONDUCTORS; OPTICAL PROPERTIES; ELECTRONIC STATES (LOCALIZED); LUMINESCENCE; NONLINEAR OPTICS;
D O I：
10.1016/0038-1098(94)00543-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Biexcitons localized at neutral acceptor sites in the direct-gap II-VI semiconductors CdS and CdSe are identified with different spectroscopic techniques such as photoluminescence, two-photon absorption and nonlinear quantum beat spectroscopy (NQBS). The NQBS offers the possibility to distinguish between quantum beats from a three-level system and polarization interference from independent two-level systems. The localized biexciton states are discussed in analogy with excited states of holes in neutral donor complexes.
引用
收藏
页码：65 / 70
页数：6
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