HOPPING CONDUCTION IN PARTIALLY COMPENSATED DOPED SILICON

被引：55

作者：

ZHANG, J ^{[1
]}

CUI, W ^{[1
]}

JUDA, M ^{[1
]}

MCCAMMON, D ^{[1
]}

KELLEY, RL ^{[1
]}

MOSELEY, SH ^{[1
]}

STAHLE, CK ^{[1
]}

SZYMKOWIAK, AE ^{[1
]}

机构：

[1] NASA, GODDARD SPACE FLIGHT CTR, GREENBELT, MD 20771 USA

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.48.2312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the dc electrical resistance of partially compensated (5-50%)_ion-implanted Si:P,B (both n and p type), over the temperature range 0.05-30 K. The temperature behavior is consistent with the prediction of the model for variable-range hopping (VRH) with a Coulomb gap rho(T)=rho0exp(T0/T)1/2 over a temperature range 6.5 < T0/T < 24. We observe deviations from this behavior at our high- and low-temperature extremes. In the low-temperature region, the resistivities show a stronger temperature dependence than the Coulomb-gap model prediction. The high-temperature deviation appears consistent with a transition from Coulomb-gap VRH to Mott VRH.

引用

页码：2312 / 2319

页数：8

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