LARGE-SCALE ACCUMULATIONS OF ELECTRICALLY ACTIVE DEFECTS IN INP-AS AND INP-GA SINGLE-CRYSTALS

被引：0

作者：

YUREV, VA

KALINUSHKIN, VP

机构：

来源：

SEMICONDUCTORS | 1995年 / 29卷 / 06期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Large-scale accumulations of electrically active defects in InP:As and InP:Ga single crystals have been studied by a method involving small-angle scattering of mid-IR light. (C) 1995 American Institute of Physics.

引用

页码：559 / 560

页数：2

共 24 条

[21] EFFECT OF LARGE-SCALE INHOMOGENEITIES ON THE PHASE-TRANSITION IN FERROELECTRIC TRIGLYCIN SULFATE SINGLE-CRYSTALS
STRUKOV, BA
YAKUSHKIN, ED
JETP LETTERS, 1978, 28 (01) : 14 - 17
[22] THE NATURE AND CONCENTRATION OF PROPER POINT-DEFECTS IN UNDOPED INP SINGLE-CRYSTALS .2. THE REGION OF INDIUM-PHOSPHIDE HOMOGENEITY
MOROZOV, AN
BUBLIK, VT
GRIGORYEVA, TP
KRISTALLOGRAFIYA, 1984, 29 (04): : 757 - 763
[23] PECULIARITIES OF DEFECTS FORMATION IN INP SINGLE-CRYSTALS DOPED WITH DONOR (S, GE) AND ACCEPTOR (ZN) IMPURITIES .2. MICRODEFECTS AND DISLOCATIONS
MIKRYUKOVA, EV
MOROZOV, AN
BERKOVA, AV
NASHELSKII, AY
YAKOBSON, SV
KRISTALLOGRAFIYA, 1988, 33 (05): : 1219 - 1226
[24] Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials
Kalinushkin, VP
Yuryev, VA
Astafiev, OV
REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (11): : 4331 - 4343

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