LARGE-SCALE ACCUMULATIONS OF ELECTRICALLY ACTIVE DEFECTS IN INP-AS AND INP-GA SINGLE-CRYSTALS

被引：0
|
作者：
YUREV, VA
KALINUSHKIN, VP
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来源：
SEMICONDUCTORS | 1995年 / 29卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Large-scale accumulations of electrically active defects in InP:As and InP:Ga single crystals have been studied by a method involving small-angle scattering of mid-IR light. (C) 1995 American Institute of Physics.
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页码：559 / 560
页数：2
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