GETTERING IN SILICON

被引：0
|
作者：
FALSTER, R
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 104期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The gettering effectiveness for transition metals and hybrid solutes such as Au and Pt in a variety of defect structures in silicon has been studied using haze tests, SIMS, RBS and TEM. A saturation is observed regardless of cooling conditions for transition metals in all cases involving surface or "extrinsic" type defect gettering. This is not the case for distributed oxygen related defects where complete gettering of the amounts of transition metals soluble at high temperatures is observed after only the slightest precipitate growth.
引用
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页码：443 / 453
页数：11
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