TRANSFORMATION OF THE CRYSTAL-STRUCTURE OF CDXHG1-XTE DUE TO ION-IMPLANTATION

The transformation of the crystal structure of CdxHg1-xTe as a result of implantation of ions with masses 11 less-than-or-equal-to M(i) less-than-or-equal-to 131 atomic mass units (amu) and of energies E < 100 keV has been studied. This study was carried out in a wide range of doses 10(14) less-than-or-equal-to PHI less-than-or-equal-to 3 x 10(17) cm-2. Bombardment with ions of mass M(i) greater-than-or-equal-to 70 amu and of energies E < 100 keV resulted in amorphization of a surface layer of CdxHg1-xTe when a certain dose PHI(a) was reached. The published dependences of structural and phase changes in CdxHg1-xTe with the irradiation conditions were explained using a model of thermal spikes. The appearance of single-crystal reflections upon reaching a certain critical dose PHI(c) >> PHI(a) was not due to recrystallization of the amorphous layer during implantation, but due to changes in the conditions of high-energy electron diffraction as a result of formation of a highly developed surface microwell.