SIMULATION OF THE AMORPHOUS-SILICON PROPERTIES AND THEIR DEPENDENCE ON SAMPLE PREPARATION

被引：58

作者：

SERVALLI, G

COLOMBO, L

机构：

[1] Dipartimento di Fisica, Universitä di Milano, Milano, 20133

来源：

EUROPHYSICS LETTERS | 1993年 / 22卷 / 02期

关键词：

AMORPHOUS AND POLYMERIC MATERIALS; TREATMENT OF MATERIALS AND ITS EFFECTS ON MICROSTRUCTURES AND PROPERTIES; COMPUTATIONAL MODELING;

D O I：

10.1209/0295-5075/22/2/006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a thorough theoretical investigation on pure amorphous silicon (a-Si) at room temperature, within a tight-binding molecular-dynamics scheme. We demonstrate that both structural and electronic properties of a-Si depend on the sample preparation, here obtained by quenching from the melt. Possible size effects are also investigated using 64- and 216-atom supercells. Finally, we discuss the reliability and transferability of the present scheme for large-scale simulations of covalent materials.

引用

页码：107 / 112

页数：6

共 50 条

[21] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN HYDROGENATED AMORPHOUS-SILICON
PARK, GL
KONG, HS
LEE, C
JANG, J
PHYSICAL REVIEW B, 1988, 38 (18): : 13200 - 13205
[22] BIAS DEPENDENCE OF DOPING EFFICIENCY IN HYDROGENATED AMORPHOUS-SILICON
ALVAREZ, F
APPLIED PHYSICS LETTERS, 1985, 47 (09) : 960 - 962
[23] PREPARATION AND PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY A CONSECUTIVE, SEPARATED REACTION CHAMBER METHOD
OHNISHI, M
NISHIWAKI, H
ENOMOTO, K
NAKASHIMA, Y
TSUDA, S
TAKAHAMA, T
TARUI, H
TANAKA, M
DOJO, H
KUWANO, Y
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1107 - 1110
[24] TEMPERATURE-DEPENDENCE OF THE MOBILITY EDGE IN AMORPHOUS-SILICON
PREMACHANDRAN, V
NARASIMHAN, KL
BAPAT, DR
PHYSICAL REVIEW B, 1984, 29 (12): : 7073 - 7075
[25] OPTICAL-PROPERTIES OF AMORPHOUS-SILICON AND SILICON DIOXIDE
RAVINDRA, NM
NARAYAN, J
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1139 - 1146
[26] AMORPHOUS-SILICON
CARLSON, DE
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1981, 4 (03): : 173 - 193
[27] AMORPHOUS-SILICON
FUEKI, K
APPLIED RADIATION AND ISOTOPES, 1986, 37 (01) : 95 - 95
[28] DEPENDENCE OF THE SATURATED LIGHT-INDUCED PHOTOCONDUCTIVITY ON MACROSCOPIC PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON
PARK, HR
WAGNER, S
SOLID STATE COMMUNICATIONS, 1991, 80 (02) : 141 - 143
[29] CNDO APPROACH TO AMORPHOUS-SILICON AND TO HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON
TAGUENAMARTINEZ, J
SANSORES, LE
CETINA, EA
PHYSICAL REVIEW B, 1983, 27 (04): : 2435 - 2438
[30] AN AMORPHOUS-SILICON FILM USABLE AT HIGH-TEMPERATURE - ANNEALING PROPERTIES OF A NEW FLUORINATED AMORPHOUS-SILICON
MATSUMURA, H
NAKAGOME, Y
FURUKAWA, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 111 - 114

← 1 2 3 4 5 →