LITHOGRAPHY FOR PATTERNING TRENCH CONTACTS

被引：0
|
作者：
GUTMANN, A
CZECH, G
STELZ, FX
KUSTERS, KH
机构：
[1] Siemens AG, Components Group, Semiconductor Division Otto-Hahn-Ring 6
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90110-D
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lithography processes suitable for the patterning of buried trench contacts were tested for two different stacked capacitor cell concepts and evaluated with respect to process latitudes.
引用
收藏
页码：535 / 540
页数：6
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