EXPERIMENTAL EVALUATION OF NOISE PARAMETERS IN GUNN AND AVALANCHE OSCILLATORS

被引：25

作者：

OHTOOMO, M

机构：

来源：

关键词：

D O I：

10.1109/TMTT.1972.1127782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：425 / &

共 50 条

[31] GUNN-EFFECT AND AVALANCHE OSCILLATORS - GENERATION OF MICROWAVES USING SOLID-STATE DIODES
MYERS, FA
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[32] SIMPLE GUNN OSCILLATORS
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[33] INGAAS GUNN OSCILLATORS
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[34] SHEET GUNN OSCILLATORS
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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (01) : 40 - &
[35] AVALANCHE AND GUNN DIODE TECHNIQUES
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[36] A POSSIBLE METHOD OF REDUCING THE NOISE OF OSCILLATORS USING IMPATT AND GUNN-DIODES
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[37] POSSIBLE METHOD OF REDUCING THE NOISE OF OSCILLATORS USING IMPATT AND GUNN DIODES.
Venger, A.Z.
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[38] LOW-NOISE OPERATION OF CW GAAS AVALANCHE DIODE OSCILLATORS
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PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (07): : 1128 - &
[39] FREQUENCY JUMP IN GUNN OSCILLATORS
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[40] OSCILLATION FORMATS OF GUNN OSCILLATORS
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ARCHIV DER ELEKTRISCHEN UND UBERTRAGUNG, 1970, 24 (05): : 225 - +