THE MOBILITY-LIFETIME PRODUCT IN DEPLETED A-SI-H DIODES

被引：1

作者：

KONENKAMP, R ^{[1
]}

MURAMATSU, S ^{[1
]}

MATSUBARA, S ^{[1
]}

SHIMADA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80332-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have performed transient photoconductivity experiments on well-characterized a-Si:H solar cells which show the following: (A) Under depletion conditions recombination is effectively suppressed, leaving only trapping as a loss mechanism in electron transport. (B) Measured trapping times depend on the experimental time scale. (C) Under non-depleted conditions trapping is dependent on the occupancy of the localized states. Our results clarify the meaning and interpretation of experiments related to time-of-flight work, and explain the observed experimental differences in steady state and transient measurements.

引用

页码：1173 / 1176

页数：4

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