GAAS-ALAS LOW-VOLTAGE REFRACTIVE MODULATOR OPERATING AT 1.06 MU-M

被引：15
|
作者：
GOOSSEN, KW
CUNNINGHAM, JE
JAN, WY
机构：
[1] AT and T Bell Laboratories, Holmdel
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期
关键词：
D O I：
10.1063/1.103432
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have produced a nonabsorbing surface-normal optical modulator operating at 1.06 μm (e.g., for a high-power Nd-YAG pump laser) which has a relative transmission change of 16% for -1 to 1 voltage swing. The structure is a GaAs-AlAs dielectric mirror with alternating n- and p-type δ doping at each interface. Doping selective contacts are made to the sample so that an applied voltage appears equally across each period of the device, yielding a strong field which changes the index of the GaAs and hence shifts the mirror.
引用
收藏
页码：744 / 746
页数：3
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