PICOSECOND 4-WAVE MIXING REFLECTIVITY OF GAAS AT 1.06 MU-M

被引：7
|
作者：
MA, HM
LI, FM
机构：
[1] Department of Physics, Fudan University, Shanghai
来源：
APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY | 1990年 / 50卷 / 05期
关键词：
42.65.Gv;
D O I：
10.1007/BF00325093
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The picosecond degenerate four-wave mixing reflectivity of semi-insulating gallium arsenide at 1.06 μm is calculated in this paper. The dependence of the reflectivity on the pump and signal fluences is measured. Reflectivities of more than one are possible. The Fourier components of the excited-carrier densities are calculated as a function of the pump fluence. The wavefront-correction property of this reflectivity is demonstrated with a lens group in the signal beam. © 1990 Springer-Verlag.
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页码：405 / 408
页数：4
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