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- [22] BREAKDOWN IN POINT CONTACT BETWEEN METAL AND GALLIUM ARSENIDE IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1968, (05): : 149 - &
- [23] SOME PROPERTIES OF NICKEL-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1536 - +
- [25] Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface Technical Physics, 2002, 47 : 698 - 702
- [28] ELECTROLUMINESCENCE OF METAL-DIELECTRIC GALLIUM ARSENIDE STRUCTURES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1974, (03): : 140 - 142
- [30] SOME PECULIARITIES OF ETCHING OF GALLIUM ARSENIDE SINGLE CRYSTALS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1971, (04): : 141 - +