STUDY OF SCHOTTKY-BARRIER AT N-TYPE AND P-TYPE INDIUM-PHOSPHIDE ELECTRODE-ELECTROLYTE INTERFACE

被引：0

作者：

VANWEZEMAEL, AM ^{[1
]}

LAFLERE, WH ^{[1
]}

CARDON, F ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT,FYS SCHEIKUNDE LAB,B-9000 GHENT,BELGIUM

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1978年 / 87卷 / 01期

关键词：

D O I：

10.1016/0368-1874(78)87057-9

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：105 / 109

页数：5

共 50 条

[1] STUDY OF THE SCHOTTKY-BARRIER AND DETERMINATION OF THE ENERGETIC POSITIONS OF BAND EDGES AT THE N-TYPE AND P-TYPE GALLIUM INDIUM-PHOSPHIDE ELECTRODE-ELECTROLYTE INTERFACE
KOCHA, SS
TURNER, JA
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JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1994, 367 (1-2): : 27 - 30
[2] SCHOTTKY CONTACTS ON CHEMICALLY ETCHED P-TYPE AND N-TYPE INDIUM-PHOSPHIDE
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APPLIED PHYSICS LETTERS, 1982, 40 (05) : 426 - 428
[3] PROPERTIES OF SCHOTTKY BARRIERS ON P-TYPE INDIUM-PHOSPHIDE
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SUZUKI, T
KUNIOKA, A
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[4] GRAIN-BOUNDARY RESISTANCE IN P-TYPE AND N-TYPE INDIUM-PHOSPHIDE
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WAGNER, S
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[5] SCHOTTKY-BARRIER OF NONUNIFORM CONTACTS TO N-TYPE AND P-TYPE SILICON
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[6] SCHOTTKY-BARRIER HEIGHTS OF N-TYPE AND P-TYPE AL0.48IN0.52AS
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[7] SCHOTTKY-BARRIER BEHAVIOR OF COPPER AND COPPER SILICIDE ON N-TYPE AND P-TYPE SILICON
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[8] ZINC DIFFUSION IN N-TYPE INDIUM-PHOSPHIDE
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JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1846 - 1855
[9] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION
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[10] TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TUNGSTEN ON N-TYPE AND P-TYPE SILICON
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