SCHOTTKY CONTACTS ON CHEMICALLY ETCHED P-TYPE AND N-TYPE INDIUM-PHOSPHIDE

被引:0
|
作者
HOKELEK, E
ROBINSON, GY
机构
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:426 / 428
页数:3
相关论文
共 50 条
  • [1] PROPERTIES OF SCHOTTKY BARRIERS ON P-TYPE INDIUM-PHOSPHIDE
    KAMIMURA, K
    SUZUKI, T
    KUNIOKA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) : L695 - L698
  • [2] AU/BE OHMIC CONTACTS TO P-TYPE INDIUM-PHOSPHIDE
    VALOIS, AJ
    ROBINSON, GY
    SOLID-STATE ELECTRONICS, 1982, 25 (10) : 973 - 977
  • [3] GRAIN-BOUNDARY RESISTANCE IN P-TYPE AND N-TYPE INDIUM-PHOSPHIDE
    SHIEH, CL
    WAGNER, S
    KAZMERSKI, LL
    MATERIALS LETTERS, 1985, 3 (11) : 415 - 418
  • [4] STUDY OF SCHOTTKY-BARRIER AT N-TYPE AND P-TYPE INDIUM-PHOSPHIDE ELECTRODE-ELECTROLYTE INTERFACE
    VANWEZEMAEL, AM
    LAFLERE, WH
    CARDON, F
    GOMES, WP
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1978, 87 (01): : 105 - 109
  • [5] INDUCED DEFECTS IN PLASMA-ETCHED P-TYPE INDIUM-PHOSPHIDE
    LUO, JK
    THOMAS, H
    PEARSALL, NM
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) : 168 - 171
  • [6] PHOTOELECTROCHEMICAL PRODUCTION OF HYDROGEN AT CHEMICALLY DERIVATIZED P-TYPE INDIUM-PHOSPHIDE
    MALLOUK, TE
    DAUBE, KA
    SPOOL, A
    WRIGHTON, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C129 - C129
  • [7] INVESTIGATION OF GOLD-ZINC CONTACTS ON N-TYPE INDIUM-PHOSPHIDE
    TUCK, B
    IP, KT
    EASTMAN, LF
    THIN SOLID FILMS, 1978, 55 (01) : 41 - 48
  • [8] ZINC DIFFUSION IN N-TYPE INDIUM-PHOSPHIDE
    VANGURP, GJ
    BOUDEWIJN, PR
    KEMPENERS, MNC
    TJADEN, DLA
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1846 - 1855
  • [9] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION
    DAVIES, DE
    LORENZO, JP
    RYAN, TG
    SOLID-STATE ELECTRONICS, 1978, 21 (07) : 981 - 985
  • [10] ALLOYED TIN-GOLD OHMIC CONTACTS TO N-TYPE INDIUM-PHOSPHIDE
    BARNES, PA
    WILLIAMS, RS
    SOLID-STATE ELECTRONICS, 1981, 24 (10) : 907 - 913