BASE TRANSPORT DYNAMICS IN A HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：16

作者：

HAYES, JR ^{[1
]}

LEVI, AFJ ^{[1
]}

GOSSARD, AC ^{[1
]}

ENGLISH, JH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 21期

关键词：

D O I：

10.1063/1.97309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1481 / 1483

页数：3

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