THE BIPOLAR SILICON MICROSTRIP DETECTOR - A PROPOSAL FOR A NOVEL PRECISION TRACKING DEVICE

被引：18
|
作者：
HORISBERGER, R
机构：
[1] Paul Scherrer Institute (PSI)
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 288卷 / 01期
关键词：
D O I：
10.1016/0168-9002(90)90469-M
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
It is proposed to combine the technology of fully depleted silicon microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n++ doped region inside the normal p+ implanted region of the reverse biased p+ n diode. Teh resulting structure has amplifying properties and is referred to as bipolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking. © 1990.
引用
收藏
页码：87 / 91
页数：5
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