DEFECT REDUCTION EFFECTS IN GAAS ON SI SUBSTRATES BY THERMAL ANNEALING

被引：177
|
作者：
YAMAGUCHI, M
YAMAMOTO, A
TACHIKAWA, M
ITOH, Y
SUGO, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 23期
关键词：
D O I：
10.1063/1.100257
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2293 / 2295
页数：3
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