共 50 条
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- [46] KINETICS OF PHOTOCONDUCTIVITY OF BERYLLIUM-DOPED N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (01): : 78 - +
- [48] NEW ANNEALING STAGE OF DEFECTS IN N-TYPE GE PRODUCED BY ELECTRON IRRADIATION AT 30 DEGREES K BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (04): : 709 - &
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- [50] TEMPERATURE DEPENDENCE OF FUNDAMENTAL ABSORPTION SPECTRUM OF LIGHTLY DOPED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1037 - &