共 50 条
- [22] Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a InxGa1-xAs/InP heterostructure PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 85 - 88
- [24] Novel direct MOCVD growth of InxGa1−xAs and InP metamorphic layers on GaAs substrates Journal of Materials Science: Materials in Electronics, 2006, 17 : 251 - 265
- [25] Real time substrate temperature control by emissivity compensated pyrometry during InxGa1-xAs1-yPy/InP growth on production scale rotating disc MOVPE reactors NEW METHODS, MECHANISMS AND MODELS OF VAPOR DEPOSITION, 2000, 616 : 15 - 20
- [30] Study of structural properties of InxGa1−xAs/InyAl1−yAs heterosystems on InP substrates Crystallography Reports, 2005, 50 : 320 - 326