X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

被引：0

作者：

Kladko, V. P. ^{[1
]}

Kuchuk, A. V. ^{[1
]}

Safryuk, N. V. ^{[1
]}

Machulin, V. F. ^{[1
]}

Belyaev, A. E. ^{[1
]}

Konakova, R. V. ^{[1
]}

Yavich, B. S. ^{[2
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] CJSC Svetlana Optoelect, St Petersburg 194156, Russia

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2010年 / 13卷 / 01期

关键词：

high resolution X-ray diffractometry; multilayered structure; deformation characteristics;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa1-xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as well as the period of the SL, thicknesses of its layers and composition of InxGa1-x solid solution in active area were determined. It was found that SL was grown on the relaxed buffer layer. SL layers were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The role of dislocations in relaxation processes was established. Analysis of experimental diffraction spectra in these multilayered structures within the frameworks of Parrat-Speriozu was adapted for hexagonal syngony structures.

引用

页码：1 / 7

页数：7

共 50 条

[41] X-RAY STANDING WAVES EXCITED IN MULTILAYERED STRUCTURES
MATSUSHITA, T
IIDA, A
ISHIKAWA, T
NAKAGIRI, T
SAKAI, K
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 246 (1-3): : 751 - 754
[42] Multilayered carbon interference structures for the X-ray optics
Kondrashov, PE
Smirnov, IS
Novoselova, EG
Baranov, AM
[J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (07): : 7 - 10
[43] X-RAY DIFFRACTION STUDY OF DEFORMATION BY FILING IN BCC REFRACTORY METALS
AQUA, EN
WAGNER, CNJ
[J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (100): : 565 - &
[44] X-RAY DIFFRACTION STUDY OF DEFORMATION OF CB-RE ALLOYS
AQUA, EN
WAGNER, CNJ
[J]. JOURNAL OF METALS, 1965, 17 (09): : 1057 - &
[45] X-RAY DIFFRACTION STUDY OF DEFORMATION OF NB(CB)-RE ALLOYS
AQUA, EN
WAGNER, CNJ
[J]. TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1966, 236 (07): : 1085 - &
[46] Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
Chierchia, R
Böttcher, T
Heinke, H
Einfeldt, S
Figge, S
Hommel, D
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) : 8918 - 8925
[47] X-ray Diffraction Method in the Study of a Metal Surface Stress State Under Static and Impact Deformation
Kren, A. P.
Delendik, M. N.
Matsulevich, O. V.
Gusev, O. K.
Pantsialeyeu, K. U.
Vorobey, R. I.
[J]. DEVICES AND METHODS OF MEASUREMENTS, 2023, 14 (02): : 115 - 125
[48] Thickness measurement of GaN films by X-ray diffraction
Li Hong-Tao
Luo Yi
Xi Guang-Yi
Wang Lai
Jiang Yang
Zhao Wei
Han Yan-Jun
Hao Zhi-Biao
Sun Chang-Zheng
[J]. ACTA PHYSICA SINICA, 2008, 57 (11) : 7119 - 7125
[49] Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells
Lee, S. R.
Koleske, D. D.
Crawford, M. H.
Wierer, J. J., Jr.
[J]. JOURNAL OF CRYSTAL GROWTH, 2012, 355 (01) : 63 - 72
[50] LOW-ANGLE X-RAY-DIFFRACTION OF MULTILAYERED STRUCTURES
VANDERSTRAETEN, H
NEERINCK, D
TEMST, K
BRUYNSERAEDE, Y
FULLERTON, EE
SCHULLER, IK
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1991, 24 : 571 - 575

← 1 2 3 4 5 →