X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

被引：0

作者：

Kladko, V. P. ^{[1
]}

Kuchuk, A. V. ^{[1
]}

Safryuk, N. V. ^{[1
]}

Machulin, V. F. ^{[1
]}

Belyaev, A. E. ^{[1
]}

Konakova, R. V. ^{[1
]}

Yavich, B. S. ^{[2
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] CJSC Svetlana Optoelect, St Petersburg 194156, Russia

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2010年 / 13卷 / 01期

关键词：

high resolution X-ray diffractometry; multilayered structure; deformation characteristics;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa1-xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice (SL) and its separate layers, degree of relaxation in the structure layers, as well as the period of the SL, thicknesses of its layers and composition of InxGa1-x solid solution in active area were determined. It was found that SL was grown on the relaxed buffer layer. SL layers were grown practically coherent with slight relaxation of InGaN layer (about 1.5 %). The role of dislocations in relaxation processes was established. Analysis of experimental diffraction spectra in these multilayered structures within the frameworks of Parrat-Speriozu was adapted for hexagonal syngony structures.

引用

页码：1 / 7

页数：7

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