EPR STUDY OF DEFECTS IN NEUTRON-IRRADIATED SILICON - QUENCHED-IN ALIGNMENT UNDER (110)-UNIAXIAL STRESS

被引：123
|
作者：
LEE, YH [1 ]
CORBETT, JW [1 ]
机构：
[1] SUNY, DEPT PHYS, ALBANY, NY 12222 USA
来源：
PHYSICAL REVIEW B | 1974年 / 9卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.9.4351
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4351 / 4361
页数：11
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