FABRICATION METHODS FOR AN ALGAAS/INGAP/ALGAAS VISIBLE LASER WITH TRANSVERSE JUNCTION STRIPE STRUCTURE GROWN BY LIQUID-PHASE EPITAXY

被引：1
|
作者：
CHANG, LB
SHAI, LZ
机构：
[1] Department of Electrical Engineering, Chung-Cheng Institute of Technology, Tashi, Taoyuan
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 07期
关键词：
D O I：
10.1016/0038-1101(93)90123-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A transverse junction stripe (TJS) structure is used to fabricate AlGaAs/InGaP/AlGaAs double hetero (DH) visible lasers on semi-insulating (SI) GaAs substrates. The use of a buffer solution, during the liquid phase epitaxy (LPE) growth of AlGaAs/InGaP/AlGaAs DH wafers on Cr and O doped GaAs substrates, serves to suppress the AlGaAs/InGaP interfacial contamination. An Si3N4 film mask is laid down on the epitaxial wafer surface by chemical vapor deposition (CVD), and subsequently plasma etched to form 100 mum wide stripe in [110] direction. A Zn diffused transverse p-n junction effectively reduces the LD's InGaP active region, and allows for continuous wave operation at room temperature, which suggests that this TJS structure is suitable for the LPE growth of AlGaAs/InGaP/AlGaAs visible laser diodes.
引用
收藏
页码：1049 / 1054
页数：6
相关论文
共 50 条
12345