Fabrication methods for an AlGaAs/InGaP/AlGaAs visible laser with transverse junction stripe structure grown by liquid phase epitaxy

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机构：

[1] Chang, L.B.

[2] Shai, L.Z.

来源：

Chang, L.B. | 1600年 / 36期

关键词：

Semiconductor lasers;

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暂无

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[1] FABRICATION METHODS FOR AN ALGAAS/INGAP/ALGAAS VISIBLE LASER WITH TRANSVERSE JUNCTION STRIPE STRUCTURE GROWN BY LIQUID-PHASE EPITAXY
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[2] ROOM-TEMPERATURE CONTINUOUS WAVE OPERATION OF A VISIBLE ALGAAS/INGAP TRANSVERSE JUNCTION STRIPE LASER GROWN BY LIQUID-PHASE EPITAXY
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[3] FABRICATION METHODS FOR INGAASP/GAAS VISIBLE LASER STRUCTURE WITH ALGAAS BURYING LAYERS GROWN BY LIQUID-PHASE EPITAXY
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[6] TRANSVERSE JUNCTION STRIPE LASERS USING SI-DOPED GAAS/ALGAAS GROWN BY MBE
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[8] Characterization of Nd-doped AlGaAs grown by liquid phase epitaxy
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[9] Characterization of Nd-doped AlGaAs grown by liquid phase epitaxy
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[10] Lattice sites of silicon impurities in AlGaAs grown by liquid phase epitaxy
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