EFFECT OF A NONMONOTONIC DEPENDENCE OF THE 1/F NOISE ON THE INTENSITY OF ILLUMINATION OF SI AND A MODEL OF THE BULK 1/F NOISE IN SEMICONDUCTORS

被引：0
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作者：
GUK, EG
DYAKONOVA, NV
LEVINSHTEIN, ME
RUMYANTSEV, SL
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 05期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：513 / 517
页数：5
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