CHARGES ON OXIDIZED SILICON SURFACES

被引：40

|

作者：

SHOCKLEY, W

QUEISSER, HJ

HOOPER, WW

机构：

来源：

PHYSICAL REVIEW LETTERS | 1963年 / 11卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.11.489

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：489 / &

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