ION-BEAM SYNTHESIS OF BURIED FESI2 IN (100) SILICON

被引：13
|
作者：
PANKNIN, D
WIESER, E
GROETZSCHEL, R
SKORUPA, W
BAITHER, D
BARTSCH, H
QUERNER, G
DANZIG, A
机构：
[1] INST FESTKORPERPHYS & ELEKTR MIKROSKOPIE,O-4010 HALLE,GERMANY
[2] TECH UNIV DRESDEN,INST WERKSTOFFPHYS,O-8027 DRESDEN,GERMANY
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 12卷 / 1-2期
关键词：
D O I：
10.1016/0921-5107(92)90270-J
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of iron silicide by high dose implantation of iron ((2-5) x 10(17) Fe+ cm-2, 300 keV) at 350-degrees-C and subsequent two-step annealing was investigated. The depth distribution of iron was studied by Rutherford backscattering spectrometry, in particular the change in iron concentration for the phase transition from beta-FeSi2 to alpha-FeSi2. Using X-ray diffraction, an admixture of FeSi in addition to FeSi2 was detected in all samples investigated, and also in the as-implanted state. Cross-sectional transmission electron microscopy indicated preferred epitaxial growth of the silicide. The transition from the semiconducting to the metallic state as a result of high temperature annealing was detected by sheet resistivity measurements.
引用
收藏
页码：119 / 122
页数：4
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