1ST-PRINCIPLES CALCULATIONS OF MULTIPLET STRUCTURES OF TRANSITION-METAL DEEP IMPURITIES IN II-VI AND III-V SEMICONDUCTORS

被引：53
|
作者：
WATANABE, S
KAMIMURA, H
机构：
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 3卷 / 03期
关键词：
D O I：
10.1016/0921-5107(89)90027-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：313 / 324
页数：12
相关论文
共 50 条
  • [21] The shallow-to-deep instability of hydrogen and muonium in II-VI and III-V semiconductors
    Cox, SFJ
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (46) : R1727 - R1780
  • [22] NONRADIATIVE TRANSITION RATES OF FE2+ IN III-V AND II-VI SEMICONDUCTORS
    PODLOWSKI, L
    HEITZ, R
    THURIAN, P
    HOFFMANN, A
    BROSER, I
    [J]. JOURNAL OF LUMINESCENCE, 1994, 58 (1-6) : 252 - 256
  • [23] Ferromagnetism in III-V and II-VI semiconductor structures
    Dietl, T
    Ohno, H
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (01): : 185 - 193
  • [24] 1ST-PRINCIPLES CALCULATIONS OF THE ELECTRONIC-PROPERTIES OF 3D TRANSITION-METAL IMPURITIES IN AL
    SINGH, PP
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (19) : 3285 - 3300
  • [25] BEHAVIOR OF TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS
    OMELYANOVSKII, EM
    FISTUL, VI
    BALAGUROV, LA
    IVLEVA, VS
    KARATAEV, VV
    MILVIDSKII, MG
    POPKOV, AN
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 381 - 382
  • [26] ON THE POSITION OF ENERGY-LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORS
    LEDEBO, LA
    RIDLEY, BK
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : L961 - L964
  • [27] Debye temperature and melting point of II-VI and III-V semiconductors
    Kumar, V.
    Jha, V.
    Shrivastava, A. K.
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (09) : 920 - 924
  • [28] Porous II-VI vs. porous III-V semiconductors
    Langa, S.
    Tiginyanu, I. M.
    Monaico, E.
    Foell, H.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 6, 2011, 8 (06): : 1792 - 1796
  • [29] (110) SURFACE STATES IN III-V AND II-VI ZINCBLENDE SEMICONDUCTORS
    CHELIKOWSKYJR
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 826 - 834
  • [30] Formation of II-VI and III-V compound semiconductors by electrochemical ALE
    Wade, TL
    Flowers, BH
    Happek, U
    Stickney, JL
    [J]. ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION AND SEMICONDUCTOR/METAL DEPOSITION II, PROCEEDINGS, 1999, 99 (09): : 272 - 281
12345