CONTROL OF ION ENERGY FOR LOW-DAMAGE PLASMA PROCESSING IN RF DISCHARGE

被引:3
|
作者
SATO, N
KOBAYASHI, H
TANABE, T
IKEHATA, T
MASE, H
机构
[1] Department of Electrical and Electronic Engineering, Ibaraki University, Hitachi
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 4B期
关键词
LOW-DAMAGE PLASMA PROCESSING; ION ENERGY CONTROL; RF DISCHARGE PLASMA; ELECTRON INJECTION; RF SHEATH RECONSTRUCTION; ION ACCELERATION;
D O I
10.1143/JJAP.34.2158
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new control technique for ion energy is based on the external electron injection into the capacitively coupled rf plasma using an auxiliary plasma source. The externally injected electrons replace the plasma electrons carrying the rf current and then reconstruct the rf sheath in which ions are accelerated. The experiment is carried out by using a parallel-plate rf plasma device with a magnetron discharge plasma source mounted behind the mesh grounded electrode. The experimental results show that the energies of ions are continuously controlled by varying the amount of injected electrons in a wide range from similar or equal to (1/2)eV(rf) to similar or equal to T-e, and this result agrees with that derived from our simple model.
引用
收藏
页码:2158 / 2162
页数:5
相关论文
共 50 条
  • [21] X-Ray photoelectron spectroscopy analysis of plasma-polymer interactions for development of low-damage plasma processing of soft materials
    Setsuhara, Yuichi
    Cho, Ken
    Shiratani, Masaharu
    Sekine, Makoto
    Hori, Masaru
    THIN SOLID FILMS, 2010, 518 (22) : 6492 - 6495
  • [22] Control of ion energy distribution at substrates during plasma processing
    Wang, SB
    Wendt, AE
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (02) : 643 - 646
  • [23] LOW-DAMAGE PROCESSING OF CDTE(110) SURFACES USING ATOMIC-HYDROGEN
    LUO, Y
    SLATER, DA
    OSGOOD, RM
    APPLIED PHYSICS LETTERS, 1995, 67 (01) : 55 - 57
  • [24] Low-damage milling of an amino acid thin film with cluster ion beam
    Hada, Masaki
    Ibuki, Sachi
    Hontani, Yusaku
    Yamamoto, Yasuyuki
    Ichiki, Kazuya
    Ninomiya, Satoshi
    Seki, Toshio
    Aoki, Takaaki
    Matsuo, Jiro
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (09)
  • [25] Measurement of electron energy distribution function in a low-pressure rf discharge plasma
    Yagura, Shinya
    Okuno, Yoshihiro
    Ohtsu, Yansunori
    Fujita, Hiroharu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (5 A): : 1503 - 1504
  • [26] Electron temperature and ion energy control in modified magnetron-typed RF discharge
    Shimizu, T
    Kato, K
    Li, Y
    Iizuka, S
    Sato, N
    THIN SOLID FILMS, 2001, 386 (02) : 248 - 251
  • [27] ION ENERGY MEASUREMENT AT THE POWERED ELECTRODE IN AN RF DISCHARGE
    KUYPERS, AD
    HOPMAN, HJ
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) : 1894 - 1898
  • [28] Ion energy distributions in a dc biased rf discharge
    Zeuner, M
    Neumann, H
    Meichsner, J
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) : 2985 - 2994
  • [29] LOW-DAMAGE AND SMOOTH ETCHING OF GAAS BY USING A NEON ION-BEAM
    UENISHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A): : 2037 - 2042
  • [30] A LOW DAMAGE, LOW CONTAMINANT PLASMA PROCESSING SYSTEM UTILIZING ENERGY CLEAN TECHNOLOGY
    GOTO, HH
    SASAKI, M
    OHMI, T
    SHIBATA, T
    YAMAGAMI, A
    OKAMURA, N
    KAMIYA, O
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1991, 4 (02) : 111 - 121