GROWTH AND CHARACTERIZATION OF CALCIUM-FLUORIDE ON (100) AND (111) SILICON SUBSTRATES

被引：2

作者：

HOWARD, LK ^{[1
]}

HAQUE, AKMM ^{[1
]}

机构：

[1] POLYTECH S BANK,DEPT BIOTECHNOL,LONDON SE1 0AA,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 11期

关键词：

D O I：

10.1088/0268-1242/7/11/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial films of CaF2 have been grown on Si(100) and Si(111). The substrate temperatures required for epitaxy, determined by Rutherford backscattering of 340 keV protons, are compared with those previously reported, as are the results of examination of the surface morphologies by scanning electron microscopy. Initial investigations of the electrical properties of the insulating films are also discussed.

引用

页码：1316 / 1324

页数：9

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