ON THE SCALING PROPERTY OF TRENCH ISOLATION CAPACITANCE FOR ADVANCED HIGH-PERFORMANCE ECL CIRCUITS

被引：2
|
作者：
LU, PF
CHUANG, CT
机构：
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 10期
关键词：
11;
D O I：
10.1109/16.59920
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed study on the scaling property trench isolation capacitance for advanced high-performance bipolar applications is presented. It is shown that the trench isolation capacitance depends on the trench structure, particularly the trench bottom and the trench fill. The dependence of the trench isolation capacitance on the trench width is then analyzed for various commonly used trench structures. The impact on the scaled-down high-performance ECL circuits is presented. © 1990 IEEE
引用
收藏
页码：2270 / 2274
页数：5
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