MAGNETO LUMINESCENCE OF AS-GROWN INAS/INP QUANTUM-WELL ISLANDS

被引:1
|
作者
SIGG, H
CHRISTIANEN, P
HOUDRE, R
RUDRA, A
机构
[1] UNIV NIJMEGEN,HIGH FIELD MAGNET LAB,6525 ED NIJMEGEN,NETHERLANDS
[2] UNIV NIJMEGEN,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS
[3] EPF LAUSANNE,INST MICRO & OPTOELECTR,CH-1010 LAUSANNE,SWITZERLAND
来源
PHYSICA SCRIPTA | 1994年 / 54卷
关键词
D O I
10.1088/0031-8949/1994/T54/019
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
InAs/InP quantum well structures with an epitaxially controlled amount of island growth are investigated by excitation spectroscopy and magnetoluminescence. From the diamagnetic shift of the luminescence, an approximate value of the exciton radius is obtained. The very small lateral radius of below 6 nm is evidence of reduced dimensionality and lateral confinement effects.
引用
收藏
页码:81 / 83
页数:3
相关论文
共 50 条
  • [41] Optical properties of InAs quantum dots grown on InP substrates
    Cheong, H
    Jeon, YJ
    Hwang, H
    Park, K
    Yoon, E
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (03) : 697 - 699
  • [42] Trimming the size of InAs/InP quantum dots grown by CBE
    Poole, P.J.
    Williams, R.L.
    Lefebvre, J.
    McCaffrey, J.P.
    Rowell, N.
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 396 - 399
  • [43] InAs quantum dots grown on InAlGaAs lattice matched to InP
    Borgstrom, M
    Pires, M
    Bryllert, T
    Landi, S
    Seifert, W
    Souza, PL
    JOURNAL OF CRYSTAL GROWTH, 2003, 252 (04) : 481 - 485
  • [44] Trimming the size of InAs/InP quantum dots grown by CBE
    Poole, PJ
    Williams, RL
    Lefebvre, J
    McCaffrey, JP
    Rowell, N
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 396 - 399
  • [45] GAINASP AND GAINAS/INP QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    TEMKIN, H
    PANISH, MB
    VANDENBERG, JM
    CHU, SNG
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 306 - 306
  • [46] Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures
    V. Ya. Aleshkin
    V. I. Gavrilenko
    D. M. Gaponova
    A. V. Ikonnikov
    K. V. Marem’yanin
    S. V. Morozov
    Yu. G. Sadofyev
    S. R. Johnson
    Y. -H. Zhang
    Semiconductors, 2005, 39 : 22 - 26
  • [47] Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures
    Aleshkin, VY
    Gavrilenko, VI
    Gaponova, DM
    Ikonnikov, AV
    Marem'yanin, KV
    Morozov, SV
    Sadofyev, YG
    Johnson, SR
    Zhang, YH
    SEMICONDUCTORS, 2005, 39 (01) : 22 - 26
  • [48] (INAS)1/(GAAS)4 SUPERLATTICES QUANTUM-WELL LASER
    DUTTA, NK
    CHAND, N
    LOPATA, J
    WETZEL, R
    APPLIED PHYSICS LETTERS, 1992, 60 (08) : 924 - 925
  • [49] Temperature-dependent luminescence of InP quantum dots coupled with an InGaP quantum well and of InP quantum dots in a quantum well
    Zhang, XB
    Ryou, JH
    Dupuis, RD
    Walter, G
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2005, 87 (20) : 1 - 3
  • [50] Polarized luminescence in CdS/ZnSe quantum-well structures
    Schmidt, M
    Grün, M
    Petillon, S
    Kurtz, E
    Klingshirn, C
    APPLIED PHYSICS LETTERS, 2000, 77 (01) : 85 - 87