MICROPLASMA-BREAKDOWN OF GERMANIUM P-N JUNCTIONS

被引：0

作者：

SHAPOVALOV, VP

KUCHIN, VD

机构：

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1971年 / 06期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：141 / +

页数：1

共 50 条

[31] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
HALL, R
LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &
[32] ELECTRIC BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS
NASLEDOV, DN
TSARENKOV, BV
[J]. SOVIET PHYSICS-SOLID STATE, 1963, 5 (04): : 862 - 867
[33] BREAKDOWN VOLTAGE OF CYLINDRICAL GAUSSIAN P-N JUNCTIONS
VINCENT, DA
ROMBEEK, H
THOMAS, RE
SIRSI, RM
BOOTHROYD, AR
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1193 - +
[34] DEVELOPMENT OF BREAKDOWN IN PLANAR SILICON P-N JUNCTIONS
MARASANO.VA
PASHINTS.YI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (02): : 156 - &
[35] PHOTO-INDUCED BREAKDOWN IN P-N JUNCTIONS
JOSEPHS, HC
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1247 - &
[36] Breakdown enhancement in silicon nanowire p-n junctions
Agarwal, P.
Vijayaraghavan, M. N.
Neuilly, F.
Hijzen, E.
Hurkx, G. A. M.
[J]. NANO LETTERS, 2007, 7 (04) : 896 - 899
[37] AVALANCHE BREAKDOWN IN EPITAXIAL SIC P-N JUNCTIONS
VANOPDORP, C
VRAKKING, J
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2320 - +
[38] REVERSE BIAS CAPACITANCE MEASUREMENTS ON COPPER-DOPED GERMANIUM P-N JUNCTIONS IN BREAKDOWN REGION
MAHADEVAN, S
SURYAN, G
[J]. PHYSICS LETTERS A, 1968, A 27 (03) : 149 - +
[39] MICROPLASMA BREAKDOWN IN GERMANIUM
POLESHUK, M
DOWLING, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3069 - &
[40] Linearization of P-N junctions by the same P-N junctions
Bruck, YM
[J]. 27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 243 - 248

← 1 2 3 4 5 →