A LOW-ENERGY LIMIT TO BORON CHANNELING IN SILICON

被引：12
|
作者：
LEVER, RF [1 ]
BRANNON, KW [1 ]
机构：
[1] IBM CORP,PALO ALTO SCI CTR,PALO ALTO,CA 94304
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 09期
关键词：
D O I：
10.1063/1.348838
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Both experimental profiles and Mone Carlo simulations have shown that a channeling tail is unavoidable in the implantation of boron into silicon at 5 keV, even though high-index channeling does not occur. A model is proposed to explain this disappearance of high-index channeling at low energies, based on simple geometrical considerations of ion deflections predicted by a binary collision potential.
引用
收藏
页码：6369 / 6372
页数：4
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