INTERPRETATION OF EXCITON PHOTOLUMINESCENCE SPECTRA IN FILMS WITH SILICON QUANTUM DOTS

被引:0
|
作者
Sachenko, A. V. [1 ]
Sokolovsky, I. O. [1 ]
Kaganovich, E. B. [1 ]
Manoilov, E. G. [1 ]
机构
[1] Nat Acad Sci Ukraine, VE Lashkarev Inst Semicond Phys, 41,Nauky Prosp, UA-03028 Kiev, Ukraine
来源
UKRAINIAN JOURNAL OF PHYSICS | 2006年 / 51卷 / 08期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The photoluminescence (PL) spectra in films with silicon quantum dots (Si QDs) - the Si nanocrystal (Si NC)/SiOx - matrix (x -> 2) system - have been considered in the framework of the excitonic photoluminescence model. The calculations made allowance for the discreteness of emitting Si NCs by size, which was determined by the minima in the oscillatory dependence of the exciton radiative lifetime on the Si NC dimensions, and the quantum- mechanical mesoscopic broadening of PL bands. A satisfactory agreement between measured and calculated PL spectra has been obtained.
引用
收藏
页码:800 / 804
页数:5
相关论文
共 50 条
  • [41] Exciton photoluminescence and energy in a percolation cluster of ZnSe quantum dots as a fractal object
    Bondar, N. V.
    Brodyn, M. S.
    SEMICONDUCTORS, 2012, 46 (05) : 625 - 630
  • [42] Dark exciton signatures in time-resolved photoluminescence of single quantum dots
    Smith, JM
    Dalgarno, PA
    Warburton, RJ
    Gerardot, BD
    Petroff, PM
    QUANTUM DOTS, NANOPARTICLES AND NANOWIRES, 2004, 789 : 177 - 182
  • [43] COMPARISON OF THE PHOTOLUMINESCENCE SPECTRA BETWEEN QUANTUM WELL STRUCTURE AND QUANTUM DOTS STRUCTURE
    Esaki, Miyuki
    Inaba, Naoko
    Fukuda, Ayako
    Imai, Hajime
    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
  • [44] Identification and control of the origin of photoluminescence from silicon quantum dots
    Hao, H. L.
    Shen, W. Z.
    NANOTECHNOLOGY, 2008, 19 (45)
  • [45] Photoluminescence Properties of Porous Silicon with CdSe/ZnS Quantum Dots
    Jarimaviciute-Zvalioniene, Renata
    Waluk, Jacek
    Prosycevas, Igoris
    MATERIALS SCIENCE-MEDZIAGOTYRA, 2011, 17 (03): : 232 - 235
  • [46] Photoluminescence from single silicon quantum dots at room temperature
    Valenta, J
    Juhasz, R
    Linnros, J
    JOURNAL OF LUMINESCENCE, 2002, 98 (1-4) : 15 - 22
  • [47] Silicon Quantum Dots: Photoluminescence Controlling and Solar Cell Application
    Shen, Wen Zhong
    SEVENTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2011, 7995
  • [48] Photoluminescence of CdSe/ZnS quantum dots in a porous silicon microcavity
    Dovzhenko, Dmitriy S.
    Martynov, Igor L.
    Samokhvalov, Pavel S.
    Eremin, Igor S.
    Kotkovskii, Gennadii E.
    Sipailo, Igor P.
    Chistyakov, Alexander A.
    NANOPHOTONICS V, 2014, 9126
  • [49] PHOTOLUMINESCENCE OF POROUS SILICON WITH INSERTED CdSe/ZnS QUANTUM DOTS
    Jarimaviciute-Zvalioniene, R.
    Kaminiska, A.
    Waluk, J.
    Prosycevas, I.
    3RD INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2010, 2010, : 345 - 348
  • [50] Photoluminescence Studies of Silicon Self-Assembled Quantum Dots
    Sakrani, Samsudi
    Idrees, Fatima Aldaw
    Wahab, Yussof
    Othaman, Zulkafli
    Sumpono, Imam
    SOLID STATE SCIENCE AND TECHNOLOGY XXVI, 2012, 501 : 209 - 213