IMPURITY IMPURITY RECOMBINATION IN A RANDOM POTENTIAL OF CHARGED IMPURITIES

被引：0
|
作者：
ZHDANOVA, NG
KAGAN, MS
LANDSBERG, EG
PETRISHCHEV, VV
机构：
来源：
JETP LETTERS | 1993年 / 58卷 / 07期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The random Coulomb potential of charged impurities affects the impurity-impurity recombination of a neutral donor and a repulsive acceptor in Ge. The coefficient of impurity-impurity recombination depends on the temperature and the illumination intensity, because impurity levels are spread out by the random potential.
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页码：533 / 537
页数：5
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