A STUDY OF DOPANTS FOR INSB AND INAS1-XSBX GROWN BY MOCVD

被引：0
|
作者：
BIEFELD, RM [1 ]
FRITZ, IJ [1 ]
ZIPPERIAN, TE [1 ]
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：297 / 298
页数：2
相关论文
共 50 条
  • [1] Raman spectroscopy of InAs1-xSbx/InSb and InAs1-xSbx/InAs superlattices, under hydrostatic pressure
    Webb, SJ
    Stradling, RA
    Nagata, K
    [J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 315 - 318
  • [2] MBE GROWTH AND CHARACTERIZATION OF INSB AND INAS1-XSBX GROWN ON GAAS
    CHYI, JI
    KALEM, S
    LITTON, CW
    MORKOC, H
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S9 - S9
  • [3] Raman spectroscopy of InAs1-xSbx/InSb and InAs1-xSbx/InAs superlattices, under hydrostatic pressure
    Webb, SJ
    Stradling, RA
    Nagata, K
    [J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 315 - 318
  • [4] Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
    Thelander, Claes
    Caroff, Philippe
    Plissard, Sebastien
    Dick, Kimberly A.
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (23)
  • [5] DOPING AND P-N-JUNCTION FORMATION IN INAS1-XSBX/INSB SLSS BY MOCVD
    BIEFELD, RM
    KURTZ, SR
    FRITZ, IJ
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (06) : 775 - 780
  • [6] Photoluminescence of MOVPE-grown InAS and InAs1-xSbx: a systematic study
    Vankova, V.
    Gladkov, P.
    Botha, J. R.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1109 - E1113
  • [7] EPITAXIAL-GROWTH OF INAS1-XSBX ALLOYS BY MOCVD
    NATAF, G
    VERIE, C
    [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 87 - 91
  • [8] GROWTH OF INSB AND INAS1-XSBX BY OM-CVD
    CHIANG, PK
    BEDAIR, SM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2422 - 2426
  • [9] GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY
    CHYI, JI
    KALEM, S
    KUMAR, NS
    LITTON, CW
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1092 - 1094
  • [10] IMPROVING THE PERFORMANCE OF INAS1-XSBX/INSB INFRARED DETECTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    BIEFELD, RM
    WENDT, JR
    KURTZ, SR
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 836 - 839
12345