Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

被引：55
|
作者：
Thelander, Claes [1 ]
Caroff, Philippe [2 ]
Plissard, Sebastien [3 ]
Dick, Kimberly A. [1 ]
机构：
[1] Lund Univ, S-22100 Lund, Sweden
[2] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France
[3] Eindhoven Univ Technol, Dept Appl Phys Photon & Semicond Nanophys, NL-5600 MB Eindhoven, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 23期
基金：
瑞典研究理事会;
关键词：
INAS;
D O I：
10.1063/1.4726037
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037]
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页数：4
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