SOME PROBLEMS OF MEASUREMENTS OF EPITAXIAL AND DIFFUSED LAYERS OF SEMICONDUCTORS

被引：0

作者：

FRANK, H ^{[1
]}

机构：

[1] CHECHOSLOVAK HIGHER TECH UNIV, FAK JADERNA FYS INZENYRSKA, PRAGUE, CZECHOSLOVAKIA

来源：

CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A | 1973年 / A 23卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：253 / 271

页数：19

共 50 条

[1] PERFECTION OF EPITAXIAL AND DIFFUSED LAYERS
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) : C262 - C262
[2] THE AVERAGE CONDUCTIVITY OF DIFFUSED LAYERS IN SEMICONDUCTORS
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[3] MEASUREMENT OF CARRIER LIFETIME PROFILES IN DIFFUSED LAYERS OF SEMICONDUCTORS
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[4] AVALANCHE BREAKDOWN OF DIFFUSED JUNCTIONS IN SILICON EPITAXIAL LAYERS
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) : 385 - +
[5] EPITAXIAL INSULATING FLUORIDE LAYERS ON SEMICONDUCTORS
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[6] Lattice sites of diffused gold and platinum in epitaxial ZnSe layers
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[7] CHARACTERISTICS OF DIFFUSED P-N JUNCTIONS IN EPITAXIAL LAYERS
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (01) : 13 - +
[8] MICROMANIPULATOR FOR ADMIXTURE DISTRIBUTION MEASUREMENT IN EPITAXIAL LAYERS OF SEMICONDUCTORS
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[9] DEVICE FOR DETERMINING THE THICKNESS OF DIELECTRIC AND EPITAXIAL LAYERS OF SEMICONDUCTORS
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[10] INFRARED INTERFERENCE MEASUREMENTS ON EPITAXIAL LAYERS
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