EVIDENCE FOR WRONG BONDS IN AMORPHOUS III-V SEMICONDUCTORS

被引：0
|
作者：
SHEVCHIK, NJ
PAUL, W
机构：
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1972年 / 17卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：321 / &
相关论文
共 50 条
  • [31] VPE GROWTH OF III-V SEMICONDUCTORS
    STRINGFELLOW, GB
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1978, 8 : 73 - 98
  • [32] CORE LEVELS OF III-V SEMICONDUCTORS
    GUDAT, W
    YU, PY
    CARDONA, M
    PENCHINA, CM
    KOCH, EE
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 52 (02): : 505 - &
  • [33] STUDIES ON III-V COMPOUND SEMICONDUCTORS
    KRANZER, D
    ZIMMERL, O
    HILLBRAND, H
    POTZL, H
    ACTA PHYSICA AUSTRIACA, 1972, 35 (1-2): : 110 - +
  • [34] Specialty gases for III-V semiconductors
    Lam, Hok Tsan
    Herman, Greg
    Semiconductor International, 2002, 25 (13) : 71 - 76
  • [35] DEFECTS IN III-V COMPOUND SEMICONDUCTORS
    PETROFF, PM
    SEMICONDUCTORS AND SEMIMETALS, 1985, 22 : 379 - 403
  • [36] COMPOSITION FLUCTUATIONS IN III-V SEMICONDUCTORS
    MACKENZIE, RAD
    LIDDLE, JA
    GROVENOR, CRM
    CEREZO, A
    JOURNAL DE PHYSIQUE, 1989, 50 (C8): : C8453 - C8458
  • [37] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
    JAROS, M
    BRAND, S
    PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505
  • [38] DILUTED MAGNETIC III-V SEMICONDUCTORS
    MUNEKATA, H
    OHNO, H
    VONMOLNAR, S
    SEGMULLER, A
    CHANG, LL
    ESAKI, L
    PHYSICAL REVIEW LETTERS, 1989, 63 (17) : 1849 - 1852
  • [39] DANGLING BONDS IN III-V COMPOUNDS
    GATOS, HC
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) : 1232 - &
  • [40] EFFECT OF WRONG BONDS ON THE ELECTRONIC-STRUCTURE OF AMORPHOUS-III-V ALLOYS
    MOSSERI, R
    GASPARD, JP
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 415 - 418
12345