CATHODOLUMINESCENCE OF SILICON-CARBIDE DOPED WITH BORON AND NITROGEN

被引：0
|
作者：
ANDREEV, AP [1 ]
VIOLIN, EE [1 ]
TAIROV, YM [1 ]
FAYANS, OA [1 ]
机构：
[1] VI LENIN ELECT ENGN INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 7卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：208 / 210
页数：3
相关论文
共 50 条
  • [31] THE KINETIC DEPENDENCE OF NITROGEN SOLUBILITY IN SILICON-CARBIDE
    RAMM, MG
    MOKHOV, EN
    VERENCHIKOVA, RG
    INORGANIC MATERIALS, 1979, 15 (12) : 1757 - 1758
  • [32] COMBUSTION SYNTHESIS OF SILICON-CARBIDE IN NITROGEN ATMOSPHERE
    YAMADA, O
    HIRAO, K
    KOIZUMI, M
    MIYAMOTO, Y
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (09) : 1735 - 1738
  • [33] Design and syntheses of poly(norbornenyldecaborane) precursors to boron carbide and boron-carbide/silicon-carbide ceramics
    Wei, XL
    Welna, DT
    Bender, JD
    Sneddon, LG
    Allcock, HR
    Solid-State Chemistry of Inorganic Materials V, 2005, 848 : 37 - 42
  • [34] NITROGEN ISOTOPES IN SILICON-CARBIDE - STELLAR NUCLEOSYNTHESIS
    HUSS, GR
    NICHOLS, RH
    WASSERBURG, GJ
    METEORITICS, 1995, 30 (05): : 523 - 523
  • [35] SURFACE DISTRIBUTION OF BORON DURING DIFFUSION IN SILICON-CARBIDE
    MOKHOV, EN
    ZVEREV, BP
    RAMM, MG
    USMANOVA, MM
    INORGANIC MATERIALS, 1980, 16 (12) : 1473 - 1476
  • [36] DIFFUSION OF BORON IN P-TYPE SILICON-CARBIDE
    MOKHOV, EN
    GONCHAROV, EE
    RYABOVA, GG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01): : 27 - 30
  • [37] STRUCTURAL AND MORPHOLOGICAL PECULIARITIES OF EPITAXIAL LAYERS AND MONOCRYSTALS OF SILICON-CARBIDE HIGHLY DOPED BY NITROGEN
    LILOV, SK
    TAIROV, YM
    TSVETKOV, VF
    CHERNOV, MA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 37 (01): : 143 - 150
  • [38] INVESTIGATION OF BLUE LUMINESCENCE OF SILICON-CARBIDE DOPED BY ION-IMPLANTATION OF ALUMINUM AND NITROGEN
    KODRAU, NV
    MAKAROV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 572 - 573
  • [39] CHARACTERISTICS OF HIGH-TEMPERATURE LUMINESCENCE OF EPITAXIAL BORON-DOPED SILICON-CARBIDE FILMS
    VODAKOV, YA
    GONCHAROV, EE
    LOMAKINA, GA
    MALTSEV, AA
    MOKHOV, EN
    ODING, VG
    RAMM, MG
    RYABOVA, GG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (02): : 126 - 129
  • [40] DETERMINATION OF FREE GRAPHITE IN TEXTURED SAMPLES OF BORON-CARBIDE AND BORON-CARBIDE SILICON-CARBIDE COMPOSITES
    BOUGOIN, M
    FILLIT, R
    THEVENOT, F
    BRUYAS, H
    JOURNAL OF THE LESS-COMMON METALS, 1986, 117 (1-2): : 215 - 223
12345