共 50 条
- [4] Effect of extended defects an the enhanced diffusion of phosphorus implanted silicon SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 199 - 204
- [5] STUDY OF STRUCTURAL DEFECTS IN SILICON BROUGHT ABOUT BY PHOSPHORUS DIFFUSION SOVIET PHYSICS SOLID STATE,USSR, 1971, 12 (12): : 2787 - +
- [10] DIFFUSION OF PHOSPHORUS IN SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (09): : 1404 - 1413