REDUCED PRESSURE AND TEMPERATURE EPITAXIAL SILICON CVD KINETICS AND APPLICATIONS

In the rapidly advancing VLSI technology the scaling of devices for higher density and better performance imposes new requirements on semiconductor materials and processes. The ability to grow thin Si epitaxial layers with sharp transition widths and of high crystallographic quality is essential for high speed technology. Using a Rapid Thermal Processing system we have studied the kinetic aspects of the most useful reacting gases like: silane, dichlorosilane and disilane. We have obtained significant results specific to the working temperatures (650 to 1100° C) and pressures (around 2 Torr). A comparative study of these systems will be presented in terms of growth rate, selectivity and defect production. We also show the feasibility of some devices and techniques where the thermal budget is of primary importance: (i) epitaxial silicon deposition on porous silicon; (ii) epitaxial silicon growth over the gate structure of a permeable base transistor and (iii) the selective deposition of TiSi2 with no substrate consumption. © 1990 The Mineral,Metal & Materials Society,Inc.