OPEN TUBE DIFFUSION OF PHOSPHORUS IN SILICON

被引：0

|

作者：

GREIG, WJ

SARACE, JC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1961年 / 108卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C175 / C175

页数：1

相关论文

共 50 条

[1] KINETICS OF OPEN TUBE PHOSPHORUS DIFFUSION IN SILICON
GHOSHTAGORE, RN
SOLID-STATE ELECTRONICS, 1978, 21 (10) : 1239 - 1243
[2] CONTROLLED GALLIUM DIFFUSION IN SILICON BY AN OPEN-TUBE SYSTEM
GHOSHTAGORE, RN
SOLID-STATE ELECTRONICS, 1979, 22 (10) : 877 - 885
[3] DIFFUSION OF PHOSPHORUS IN SILICON
KOOI, E
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : C216 - C216
[4] DIFFUSION OF PHOSPHORUS INTO SILICON
MAEKAWA, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (10) : 1592 - &
[5] THE DIFFUSION OF PHOSPHORUS IN SILICON
MACKINTOSH, IM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) : 392 - 401
[6] DIFFUSION OF PHOSPHORUS IN SILICON
YOSHIDA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (09): : 1404 - 1413
[7] DIFFUSION OF PHOSPHORUS IN SILICON
MACKINTOSH, IM
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : C67 - C67
[8] ALUMINUM DIFFUSION INTO SILICON IN AN OPEN TUBE HIGH-VACUUM SYSTEM
ROSNOWSKI, W
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 957 - 962
[9] DOPED OXIDE GALLIUM DIFFUSION IN SILICON - A SIMPLE OPEN TUBE TECHNIQUE
RAMAMURTHY, V
SUBRAHMANYAM, J
MATERIALS LETTERS, 1987, 5 (09) : 365 - 368
[10] OPEN TUBE, HIGH-VACUUM METHOD FOR ALUMINUM DIFFUSION INTO SILICON
ROSNOWSKI, W
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C103 - C103

← 1 2 3 4 5 →