HRTEM STUDY OF ATOMIC FACETING INTERFACES OF SIGMA=3 NISI2/SI ON (011)SI SUBSTRATE

In this paper, the NiSi2 thin film is grown on the (1 $($) over bar$$ 10) Si substrate and the Sigma = 3 NiSi2(($) over bar 11 $$($) over bar 1)/(($) over bar 111)Si and NiSi2(1 $($) over bar$$ 15)/(($) over bar 111)Si microfacets were found. The chain unit model is examined in the NiSi2(1 $($) over bar$$ 15)/(($) over bar 111)Si interface where the NiSi2 and the Si are interchanged, comparing with the NiSi2(($) over bar 111)/(1 $($) over bar$$ 15)Si interface in the previous case. Two different domain related atomic faceting structures of the NiSi2(1 $($) over bar$$ 15)/(($) over bar 111)Si interface are found. A 1/4[111] junction dislocation presents in the junction of the Sigma = 3 NiSi2(($) over bar 11 $$($) over bar 1)/(($) over bar 111)Si and NiSi2(1 $($) over bar$$ 15)/(($) over bar 111)Si microfacets which are related to different rigid body translation. As the NiSi2 thin film migrates, the NiSi2(1 $($) over bar$$ 15)/(($) over bar 111)Si interface bows further to NiSi2(001)/(2 $($) over bar$$ 21)Si and NiSi2(1 $($) over bar$$ 14)/(1 $($) over bar$$ 10)Si interface. The atomic structure of NiSi2(115)/(111)Si, NiSi2(001)/(221)Si and NiSi2(114)/(110)Si interfaces can be explained in terms of chain unit model. The mechanism for the interface migration in the atomic scale will be proposed. The migration of these interfaces can be assisted by the dislocation/step similar to the diffusion induced grain boundary process (DIGM) or by short range diffusion without the assistance of dislocation/step.