PALLADIUM SILICIDE OHMIC CONTACTS TO SHALLOW JUNCTIONS IN SILICON

被引：5
|
作者：
SINGH, RN
SKELLY, DW
BROWN, DM
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 11期
关键词：
D O I：
10.1149/1.2108414
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2390 / 2393
页数：4
相关论文
共 50 条
  • [31] GROWTH AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE CONTACTS ON DRY-ETCHED SILICON SURFACES
    CLIMENT, A
    FONASH, SJ
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1063 - 1069
  • [32] ELECTRICAL CHARACTERISTICS AND THERMAL-STABILITY OF PLATINUM SILICIDE-TO-SILICON OHMIC CONTACTS METALIZED WITH TUNGSTEN
    SINHA, AK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1767 - 1771
  • [33] Anomalous junction leakage behavior of Ti self aligned silicide contacts on ultra-shallow junctions
    Sakata, A
    Tomita, M
    Koike, M
    Koyama, M
    Kunishima, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1558 - 1562
  • [34] The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide
    Guo Hui
    Zhang Yi-Men
    Qiao Da-Yong
    Sun Lei
    Zhang Yu-Ming
    CHINESE PHYSICS, 2007, 16 (06): : 1753 - 1756
  • [35] Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H Silicon Carbide
    Kuchuk, A.
    Kladko, V.
    Guziewicz, M.
    Piotrowska, A.
    Minikayev, R.
    Stonert, A.
    Ratajczak, R.
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
  • [36] Characterization of sputtered titanium silicide ohmic contacts on n-type 6H-silicon carbide
    Getto, R
    Freytag, J
    Kopnarski, M
    Oechsner, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 270 - 274
  • [37] FORMATION OF SHALLOW P+ JUNCTIONS BY IMPLANTATION INTO SILICIDE
    BARLOW, KJ
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 507 - 510
  • [38] Shallow ohmic contacts to p-type InAs
    Lysczek, EM
    Mohney, SE
    Wittberg, TN
    ELECTRONICS LETTERS, 2003, 39 (25) : 1866 - 1868
  • [39] NOISE PROPERTIES OF SILICIDE SILICON SCHOTTKY CONTACTS
    GUTTLER, HH
    WERNER, JH
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 49 - 49
  • [40] OHMIC, SUPERCONDUCTING, SHALLOW AUGE/NB CONTACTS TO GAAS
    GURVITCH, M
    KASTALSKY, A
    SCHWARZ, S
    HWANG, DM
    BUTHERUS, D
    PEARTON, S
    GARDNER, CR
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3204 - 3210
12345