DIAMOND RESISTORS FABRICATED MONOLITHICALLY ON DIAMOND FILM SUBSTRATE

被引：0
|
作者：
DAVIDSON, JL [1 ]
SHOR, JS [1 ]
WUR, D [1 ]
KURTZ, AD [1 ]
机构：
[1] KULITE INC,LEONIA,NJ 07605
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 12期
关键词：
D O I：
10.1149/1.2059364
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A novel fabrication process for monolithic, electrically isolated diamond resistors is discussed. Selective growth of p-type diamond resistors on undoped diamond has been accomplished by using SiO2 as a sacrificial, ''lift-off'' layer. Diamond resistors with linewidths less than 10 mu m exhibited resistivities of 10 to 20 Omega-cm. No measurable leakage between the resistors or to the substrate was observed.
引用
收藏
页码：3522 / 3525
页数：4
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