LOW-TEMPERATURE IRRADIATION AND ANNEALING OF P-TYPE GERMANIUM

被引：0
|
作者：
STAS, VF
SMIRNOV, LS
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 2卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1147 / &
相关论文
共 50 条
  • [41] LOW-TEMPERATURE TRANSPORT-PROPERTIES OF P-TYPE COSB3
    MORELLI, DT
    CAILLAT, T
    FLEURIAL, JP
    BORSHCHEVSKY, A
    VANDERSANDE, J
    CHEN, B
    UHER, C
    PHYSICAL REVIEW B, 1995, 51 (15) : 9622 - 9628
  • [42] Low-temperature synthesized, p-type transparent conducting material for PV devices
    Woods-Robinson, Rachel
    Xu, Xiaojie
    Ager, Joel W.
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [43] MAGNETOCONDUCTIVITY IN P-TYPE GERMANIUM
    GOLDBERG, C
    ADAMS, EN
    DAVIS, RE
    PHYSICAL REVIEW, 1957, 105 (03): : 865 - 876
  • [44] Dynamical Spin Injection into p-Type Germanium at Room Temperature
    Koike, Mariko
    Shikoh, Eiji
    Ando, Yuichiro
    Shinjo, Teruya
    Yamada, Shinya
    Hamaya, Kohei
    Shiraishi, Masashi
    APPLIED PHYSICS EXPRESS, 2013, 6 (02)
  • [45] TEMPERATURE AND CONCENTRATION DEPENDENCE OF THERMAL EMF IN P-TYPE GERMANIUM
    VINOGRADOVA, MN
    GOLIKOVA, OA
    DUBROVSKAYA, IN
    MOIZHES, BY
    SOVIET PHYSICS-SOLID STATE, 1963, 5 (06): : 1204 - 1211
  • [46] LOW-TEMPERATURE TRANSPORT IN SPLIT P-GERMANIUM
    KOENIG, SH
    HALL, JJ
    PHYSICAL REVIEW LETTERS, 1960, 5 (12) : 550 - 553
  • [47] The effect of low-temperature annealing on the electrical properties of the p-type cadmium–mercury–tellurium heterostructures grown by molecular beam epitaxy
    D. Yu. Protasov
    А. R. Novoselov
    D. V. Kombarov
    V. Ya. Kostyuchenko
    А. Е. Dolbak
    N. N. Мikhailov
    S. А. Dvoretskii
    Russian Physics Journal, 2013, 56 : 313 - 318
  • [48] Effect of low-temperature annealing on defect causing copper-related light-induced degradation in p-type silicon
    Vahlman, Henri
    Haarahiltunen, Antti
    Kwapil, Wolfram
    Schoen, Jonas
    Yli-Koski, Marko
    Inglese, Alessandro
    Modanese, Chiara
    Savin, Hele
    7TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2017, 2017, 124 : 188 - 196
  • [49] Negatively charged silicon nitride films for improved p-type silicon surface passivation by low-temperature rapid thermal annealing
    Wang, Peng
    Jin, Shangjie
    Lu, Tao
    Cui, Can
    Yang, Deren
    Yu, Xuegong
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (34)
  • [50] LOW-TEMPERATURE RADIATION-DAMAGE IN SILICON .2. PRODUCTION-RATES AND ANNEALING STUDIES ON P-TYPE MATERIAL
    AWADELKARIM, OO
    PHYSICA B & C, 1987, 145 (01): : 39 - 44
12345