MAGNETICALLY CONFINED PLASMA REACTIVE ION ETCHING OF GAAS/ALGAAS/ALAS QUANTUM NANOSTRUCTURES

被引：10
|
作者：
SONG, YP
WANG, PD
TORRES, CMS
WILKINSON, CDW
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期
关键词：
D O I：
10.1116/1.587518
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：3388 / 3392
页数：5
相关论文
共 50 条
  • [41] Photoluminescence study of AlGaAs/GaAs/AlGaAs double quantum wells separated by a thin AlAs layer
    G. B. Galiev
    M. V. Karachevtseva
    V. G. Mokerov
    V. A. Strakhov
    G. N. Shkerdin
    N. G. Yaremenko
    [J]. Semiconductors, 2003, 37 : 581 - 585
  • [42] SELECTIVE REACTIVE ION ETCHING OF GAAS/ALGAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    CAMERON, NI
    HOPKINS, G
    THAYNE, IG
    BEAUMONT, SP
    WILKINSON, CDW
    HOLLAND, M
    KEAN, AH
    STANLEY, CR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3538 - 3541
  • [43] A SiCl4 reactive ion etching and laser reflectometry process for AlGaAs/GaAs HBT fabrication
    Granier, H
    Tasselli, J
    Marty, A
    Hu, HP
    [J]. VACUUM, 1996, 47 (11) : 1347 - 1351
  • [44] CHARACTERIZATION OF SELECTIVE REACTIVE ION ETCHING EFFECTS ON DELTA-DOPED GAAS/ALGAAS MODFET LAYERS
    AGARWALA, S
    TONG, M
    BALLEGEER, DG
    NUMMILA, K
    KETTERSON, AA
    ADESIDA, I
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (04) : 375 - 381
  • [45] SELECTIVE REACTIVE ION ETCHING OF GAAS ON ALGAAS USING CCL2F2 AND HE
    SEABAUGH, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 77 - 81
  • [46] ANISOTROPIC REACTIVE ION ETCHING TECHNIQUE OF GAAS AND ALGAAS MATERIALS FOR INTEGRATED OPTICAL-DEVICE FABRICATION
    YAMADA, H
    ITO, H
    INABA, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 884 - 888
  • [47] Selective reactive ion etching of GaAs/AlAs in BCl3/SF6 for gate recess
    Lee, YS
    Upadhyaya, K
    Nordheden, KJ
    Kao, MY
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (05): : 2505 - 2508
  • [48] Reactive-ion etching of high-Q and submicron-diameter GaAs/AlAs micropillar cavities
    Varoutsis, S
    Laurent, S
    Sagnes, I
    Lemaître, A
    Ferlazzo, L
    Mériadec, C
    Patriarche, G
    Robert-Philip, I
    Abram, I
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06): : 2499 - 2503
  • [49] GAAS RADICAL ETCHING WITH A CL2 PLASMA IN A REACTIVE ION-BEAM ETCHING SYSTEM
    SUGATA, S
    ASAKAWA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L564 - L566
  • [50] REACTIVE ION ETCHING-INDUCED DAMAGE IN GAAS/ALGAAS QUANTUM-WELL STRUCTURES AND RECOVERY BY RAPID THERMAL ANNEALING AND HYDROGEN PASSIVATION
    YOO, BS
    PARK, SJ
    PARK, KH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 931 - 934
12345